(iTers News) - Samsung Electronics’ push for V-NAND flash memory chip technology is coming closer to fruition, as the 3D structure non-volatile memory chip is laying out the groundwork for the mass-replacement of SSD, or solid state drive markets with traditional HDD, or hard disk drives.
About one year after it started mass-production of 24 layer 3D V-NAND flash memory chips, Samsung Electronics has started volume production of 32 layer 3D V-NAND flash memory chip in what the chip maker said is the world’s first mass rollout of the 32 layer-structured NAND flash chip.
The V-NAND flash memory chip is a new breed of NAND flash memory chip that vertically stacks transistor cells in a 3-dimesnion cylindrical structure. The 32 layer NAND flash memory chip refers to a chip that deposit 32 layers of transistor cells atop each other.
Unlike conventional planar 2D structure NAND flash memory chips stores data in a conductive floating gate, the 3D V-NAND NAND flash memory chip writes and reads data out of what’s called a non-conductive charge trapping gate.
The implementation of the non-conductive charge trapping gate translates into less occurrence of short circuits between the non-conductive gate and the channel gate, more endurance of what’s called as flash –out, or data defect rate, thinner gate oxide, and less power consumption. For example, the new 3D V-NAND-based SSDs have approximately twice the endurance for writing data and consume 20% less power, compared to planar 2D MLC NAND-based drives.
Compared with the 2d planar cell structure, the 3D vertical structure also can store more of data in a given silicon footprint, as it cram more of cells in a single silicon die.
All combined, the technology innovations leave Samsung with ample room for cost-cutting, enabling the chip maker to churn out higher density SSD at lower costs.
SSDs are a collection of NAND flash memory chips, a microcontroller, and a firmware on a circuit board. They can read and write data much faster than mechanical ultra-tiny micro-motor-based HDDs. Yet, they are still costlier, which is a major impediment against the rapid replacement of HDDs.
As the 3D V-NAND flash memory chip boasts of lower costs per bit stored in a given space, it has been expected to help speed up the replacement.
For example, Samsung has just launched a line-up of premium SSDs based on the 32 cell-layered V-NAND flash memory, including 128 GB, 256GB, 512GB and 1TB storage options.
“We increased the availability of our 3D V-NAND by introducing an extensive V-NAND SSD line-up that covers the PC market in addition to data centers,” said Young-Hyun Jun, executive vice president, memory sales and marketing, Samsung Electronics. “Look for us to provide a consistent, timely supply of high-performance, high-density V-NAND SSDs as well as core V-NAND chips for IT customers globally, contributing to fast market adoption of 3D NAND technology.”
According to a recent research report by market research firm Gartner, NAND flash memory chips will grow to US$44.6 billion in 2017, or more than 50% of worldwide memory chip market, which will hit approximately US$79.7 billion, as the penetration will speed up.